Hydrogenated amorphous silicon

by Street, R. A.
 
Citation
Title:
Hydrogenated amorphous silicon
Author:
Street, R. A.
Editor:
City:
Cambridge
Publisher:
Cambridge University Press
Year:
1991
Volume:
No. of Volumes:
Edition:
Pages:
Series Volume:
Series Editor:
Series Title:
Cambridge solid state science series
Translator:
Language:
English
URL:
DOI:
LCCN:
OCLC Number:
License
Select License
ISBN:
0521371562
0521371562
Last Updated:
August 3rd, 2011
Abstract

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AlibrisNew. Sewn binding. Cloth over boards. 432 p. Contains: Illustrations, black & white. Arnold and Caroline Rose Monograph Series of the American So.US$ 203.76 US$ 3.50US$ 207.26
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AlibrisNew This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si: H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general. Your satisfaction is our #1 Priority. We really care. 25 year bookseller, over 10 Million Customers. This book sourced directly from Ingram Lightning Source.US$ 227.00 US$ 3.50US$ 230.50
AlibrisNew This book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si: H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general. Your satisfaction is our #1 Priority. We really care. 25 year bookseller, over 10 Million Customers. This book sourced directly from Ingram Lightning Source.US$ 227.00 US$ 3.50US$ 230.50
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